?2004 fairchild semiconductor corporation rev. a, august 2004 fjc2383 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current 1 a i b base current 0.5 a p c collector power dissipation 500 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current v cb =150v, i e =0 1 a i ebo emitter cut-off current v eb =6v, i c =0 1 a bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 160 v h fe dc current gain v ce =5v, i c =200ma 100 320 v ce (sat) collector-emitter saturation voltage i c =500ma, i b =50ma 1.5 v v be (on) base-emitter on voltage v ce =5v, i c =5ma 0.45 0.75 v f t current gain bandwidth product v ce =5v, i c =200ma 20 100 mhz c ob output capacitance v cb =10v, i e =0, f=1mhz 20 pf classification o y h fe 100 ~ 200 160 ~ 320 fjc2383 color tv audio output & color tv vertical deflection output fdy marking h fe grade sot-89
?2004 fairchild semiconductor corporation fjc2383 rev. a, august 2004 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. collector-emitter saturation voltage figure 5. base-emitter on voltage figure 6. collector output capacitance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i b = 10ma emitter common t a =25 o c i b = 0.5ma i b = 1ma i b = 15ma i b = 6ma i b = 4ma i b = 3ma i b = 2.5ma i b = 2ma i b = 1.5ma ic[ma], collector current v ce [v], collector-emitter voltage 10 100 1000 1 10 100 1000 v ce =5v v ce =10v emitter common h fe , dc current gain i c [ma], collector current 100 1000 10 100 1000 v ce =1v v ce =5v v ce =10v emitter common t a = 25 o c h fe , dc current gain i c [ma], collector current 1 10 100 1000 1e-3 0.01 0.1 1 i c /i b =5 emitter common t a = 25 o c i c /i b =10 v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0 emitter common i c /i b =10 i c [a], collector current v be [v], base-emitter voltage 1 10 100 1000 1 10 100 1000 emitter common f = 1mhz t a = 25 o c c ob [pf], capacitance v cb [v], collector base voltage
?2004 fairchild semiconductor corporation fjc2383 rev. a, august 2004 typical characteristics (continued) figure 7. current gain bandwidth product 1 10 100 1000 1 10 100 1000 emitter common t a = 25 o c f t [mhz], current gain bandwidth product i c [ma], collector current
package dimensions fjc2383 dimensions in millimeters rev. a, august 2004 ?2004 fairchild semiconductor corporation 0.40 0.10 2.50 0.20 (0.50) (0.40) 4.10 0.20 0.40 +0.10 ?.05 0.50 0.10 1.65 0.10 4.50 0.20 1.50 0.20 c0.2 1.50 typ 1.50 typ (1.10) sot-89
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